APTGT200SK60T3AG APTGT200SK60T3AG ? rev 0 may, 2009 www.microsemi.com 1 ? 5 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 pins 29/30/31/32 must be shorted together pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg pins 16/18/19/20 must be shorted together absolute maximum ratings these devices are sensitive to electrosta tic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 290 i c continuous collector current t c = 100c 200 i cm pulsed collector current t c = 25c 400 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 750 w rbsoa reverse bias safe operating area t j = 150c 400a @ 550v application ? ac and dc motor control ? switched mode power supplies features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? very low stray inductance ? kelvin emitter for easy drive ? internal thermistor fo r temperature monitoring ? high level of integration ? aln substrate for improved thermal performance benefits ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant buck chopper trench + field stop igbt power module v ces = 600v i c = 200a @ tc = 100c
APTGT200SK60T3AG APTGT200SK60T3AG ? rev 0 may, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 200a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 2 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 12.3 c oes output capacitance 0.8 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.4 nf q g gate charge v ge = 15v ; v ce =300v i c =200a 2.2 c t d(on) turn-on delay time 115 t r rise time 45 t d(off) turn-off delay time 225 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 200a r g = 2 55 ns t d(on) turn-on delay time 130 t r rise time 50 t d(off) turn-off delay time 300 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 200a r g = 2 70 ns t j = 25c 1 e on turn on energy t j = 150c 1.8 mj t j = 25c 5.7 e off turn off energy v ge = 15v v bus = 300v i c = 200a r g = 2 t j = 150c 7 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 1000 a chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 200 a t j = 25c 1.6 2 v f diode forward voltage i f = 200a v ge = 0v t j = 150c 1.5 v t j = 25c 125 t rr reverse recovery time t j = 150c 220 ns t j = 25c 9 q rr reverse recovery charge t j = 150c 20 c t j = 25c 2.2 er reverse recovery energy i f = 200a v r = 300v di/dt =2800a/s t j = 150c 4.8 mj
APTGT200SK60T3AG APTGT200SK60T3AG ? rev 0 may, 2009 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.20 r thjc junction to case thermal resistance diode 0.31 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT200SK60T3AG APTGT200SK60T3AG ? rev 0 may, 2009 www.microsemi.com 4 ? 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 50 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 50 100 150 200 250 300 350 400 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 50 100 150 200 250 300 350 400 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 i c (a) e (mj) v ce = 300v v ge = 15v r g = 2 ? t j = 150c eon eon eoff er 0 4 8 12 16 0 2 4 6 8 10 12 14 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 200a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 0 100 200 300 400 500 600 700 v ce (v) i f (a) v ge =15v t j =150c r g =2 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT200SK60T3AG APTGT200SK60T3AG ? rev 0 may, 2009 www.microsemi.com 5 ? 5 forward characteristic of diode t j =25c t j =125c t j =150c 0 50 100 150 200 250 300 350 400 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 50 100 150 200 250 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =2 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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